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Photovoltaic Effect and Utilization of Photovoltaic Cells - Effect of Sub-threshold Electron Radiation on Surface Properties of Ge P-V Cells Second Semiannual Report, 1 Nov. 1965 - 31 May 1966Effect of high energy electron irradiation on surface recombination properties of germanium p-n junction photovoltaic cells
Document ID
19660024098
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Giriat, W.
Kasai, I.
Loferski, J. J.
Date Acquired
August 3, 2013
Publication Date
June 1, 1966
Subject Category
Auxiliary Systems
Report/Patent Number
NASA-CR-77042
Report Number: NASA-CR-77042
Accession Number
66N33388
Funding Number(s)
CONTRACT_GRANT: NGR-40-002-026
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
GERMANIUM
SURFACE REACTION
ATOMIC RECOMBINATION
P-N JUNCTION
PHOTOVOLTAIC CELL
ELECTRON RADIATION

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