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Zn and Te implantations into GaAs.Electrically active centers distribution in Zn and Te implantations into GaAs
Document ID
19670050766
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Bower, R.
Mankarious, R.
Marsh, O. J.
Mayer, J. W.
Date Acquired
August 3, 2013
Publication Date
March 15, 1967
Publication Information
Publication: JOURNAL OF APPLIED PHYSICS
Subject Category
Physics, Solid-State
Accession Number
67A29495
Distribution Limits
Public
Copyright
Other
Keywords
SEMICONDUCTOR
IMPLANTATION
CHARGE DISTRIBUTION
GALLIUM ARSENIDE
CONTACT RESISTANCE

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