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Combined MOS and radiochemical analysis of impurities in SiO sub 2 on Si.Oxide impurity effects causing potential shifts in Si covered by thick oxide layer studied with metal-oxide-Si electrical measurement and radiochemical analysis
Document ID
19690040283
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kuper, A. B.
Date Acquired
August 5, 2013
Publication Date
January 1, 1969
Subject Category
Chemistry
Meeting Information
Meeting: AMERICAN CHEMICAL SOCIETY, SYMPOSIUM ON SEMICONDUCTOR PHENOMENA
Location: SAN FRANCISCO, CALIF.
Start Date: March 31, 1968
End Date: April 5, 1968
Sponsors: AMERICAN CHEMICAL SOCIETY
Accession Number
69A18272
Funding Number(s)
CONTRACT_GRANT: NGR-36-003-067
Distribution Limits
Public
Copyright
Other

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