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Properties of GaP Schottky barrier diodes at elevated temperatures.Gallium phosphide Schottky barrier diodes, discussing construction and metals used, barrier height relationships to impurity concentration and temperature, rectifying characteristics and internal quantum efficiency
Document ID
19690053624
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Nannichi, Y.
Pearson, G. L.
Date Acquired
August 5, 2013
Publication Date
May 1, 1969
Subject Category
Electronic Equipment
Accession Number
69A31613
Funding Number(s)
CONTRACT_GRANT: NSG-555
CONTRACT_GRANT: NGR-05-020-043
Distribution Limits
Public
Copyright
Other

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