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Tunneling measurement of electron-plasmon interaction in degenerate semiconductors.Electron-plasmon interaction in degenerate semiconductors, using mathematical model for rectifying metal contacts tunneling characteristics
Document ID
19690058060
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Duke, C. B.
Rice, M. J.
Steinrisser, F.
Date Acquired
August 5, 2013
Publication Date
May 10, 1969
Subject Category
Physics, Solid-State
Accession Number
69A36049
Funding Number(s)
CONTRACT_GRANT: NSG-228-62
CONTRACT_GRANT: DAAB07-67-C-0199
CONTRACT_GRANT: DA-31-124-ARO/D/-114
Distribution Limits
Public
Copyright
Other

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