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Ohmic contacts to solution-grown gallium arsenideCarrier concentration profiles and surface resistance of Ohmic contacts to solution epitaxial n-type GaAs wafers measured by Schottky barrier capacitance
Document ID
19700038097
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Day, G. F.
Harris, J. S.
Nannichi, Y.
Pearson, G. L.
Date Acquired
August 5, 2013
Publication Date
October 1, 1969
Subject Category
Physics, Solid-State
Accession Number
70A14213
Funding Number(s)
CONTRACT_GRANT: NGL-05-020-043
Distribution Limits
Public
Copyright
Other

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