Interference effect on annealing temperature of A and E centers in silicon.

Fang, P. H.; Tanaka, T.

The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.

Document ID

19720030863

Document Type

Reprint (Version printed in journal)

External Source(s)

doi:10.1063/1.1659945

Authors

Fang, P. H. (Boston College Chestnut Hill, Mass., United States)

Tanaka, T. (Catholic University of America, Washington, D.C., United States)

Date Acquired

August 6, 2013

Publication Date

December 1, 1971

Publication Information

Publication: Journal of Applied Physics

Volume: 42

Subject Category

Distribution Limits

Public

Other

NTRS

NTRS - NASA Technical Reports Server