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Interference effect on annealing temperature of A and E centers in silicon.The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.
Document ID
19720030863
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.1659945
Authors
Fang, P. H. (Boston College Chestnut Hill, Mass., United States)
Tanaka, T. (Catholic University of America, Washington, D.C., United States)
Date Acquired
August 6, 2013
Publication Date
December 1, 1971
Publication Information
Publication: Journal of Applied Physics
Volume: 42
Subject Category
Physics, Solid-State
Accession Number
72A14529
Distribution Limits
Public
Copyright
Other

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