NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Interference effect on annealing temperature of A and E centers in silicon.The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.
Document ID
19720030863
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.1659945
Authors
Fang, P. H. (Boston College Chestnut Hill, Mass., United States)
Tanaka, T. (Catholic University of America, Washington, D.C., United States)
Date Acquired
August 6, 2013
Publication Date
December 1, 1971
Publication Information
Publication: Journal of Applied Physics
Volume: 42
Subject Category
Physics, Solid-State
Accession Number
72A14529
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.

Related Records

There are no records associated with this record.
No Preview Available