Acoustic-wave detection via a piezoelectric field-effect transducer.

An oriented piezoelectric film has been incorporated in the insulator region of a silicon insulated-gate field-effect transistor to provide a sensitive high-frequency strain transducer. With this device, strains as low as 10 to the -8th power have been detected, and gauge factors of roughly 7000 have been attained for applied ac strains at 5.6 MHz.