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Influence of oxygen-vacancy complex /A center/ on piezoresistance of n-type silicon.Changes in both magnitude and temperature dependence of the piezoresistance of electron-irradiated n-type silicon, induced by the latter's oxygen-vacancy complex (A center), are shown to be due to the fact that the presence of the A center causes the total conduction-band electron concentration to change with an applied stress. This change in electron concentration leads to an additional piezoresistance contribution that is expected to be important in certain many-valley semiconductors. This offers the possibility of tailoring the thermal variations of semiconductor mechanical sensors to more desirable values over limited temperature ranges.
Document ID
19720039573
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Littlejohn, M. A.
Loggins, C. D., Jr.
(North Carolina State University Raleigh, N.C., United States)
Date Acquired
August 6, 2013
Publication Date
March 1, 1972
Publication Information
Publication: Journal of Applied Physics
Volume: 43
Subject Category
Physics, Solid-State
Accession Number
72A23239
Distribution Limits
Public
Copyright
Other

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