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Time-of-flight mobility and trapping results for ZnSe.Results of measurements of time-of-flight mobility and trapping for zinc selenide. The data were obtained at room temperature for electric fields in the range from 30,000 to 800,000 V/cm. A relatively constant hole mobility (about 50 sq cm/V sec) was found for the entire range of investigated fields. The electron mobility was approximately constant (about 400 sq cm/V sec) up to approximately equal to 300,000 V/cm, above which the drift velocity remained constant. No obvious negative differential mobility was observed, even though the Gunn effect has been reported for the field range investigated. Trapping and detrapping times in the vicinity of 1 nsec are reported for both holes and electrons. The field dependence of the electron-trapping times is unusual and remains unexplained.
Document ID
19720044169
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Heaton, J. L., III
Hammond, G. H.
Goldner, R. B.
(Tufts University Medford, Mass., United States)
Date Acquired
August 6, 2013
Publication Date
May 1, 1972
Publication Information
Publication: Applied Physics Letters
Volume: 20
Subject Category
Physics, Solid-State
Accession Number
72A27835
Distribution Limits
Public
Copyright
Other

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