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Recombination luminescence in irradiated silicon-effects of uniaxial stress and temperature variations.Demonstration that luminescence in irradiated silicon consists of a spectral group between 0.80 and 1.0 eV which seems to be independent of impurities, while a lower energy group between 0.60 and 0.80 eV is seen only in pulled crystals. The small halfwidth and temperature dependence of the sharp zero-phonon lines observed in these spectra indicate that the luminescence arises from a bound-to-bound transition. A model is proposed for the transition mechanism. Stress data taken on the 0.79-eV zero-phonon line in pulled crystals can be fit by either a tetragonal 100 (in brackets) defect symmetry or by conduction-band splitting effects. It is suggested that the 0.79-eV zero-phonon line and the 0.60- to 0.80-eV spectral group arise from the EPR G-15 center. Stress data on a zero-phonon line at 0.97 eV associated with the 0.80- to 1.0-eV spectral group can be explained by a trigonal 111 (in brackets) defect. The divacancy is tentatively suggested as responsible for this luminescence spectra.
Document ID
19720044395
Document Type
Conference Proceedings
Authors
Jones, C. E.
Compton, W. D. (Illinois, University Urbana, Ill., United States)
Date Acquired
August 6, 2013
Publication Date
January 1, 1971
Subject Category
PHYSICS, SOLID-STATE
Meeting Information
Radiation effects in semiconductors; International Conference(Albany, NY)
Funding Number(s)
CONTRACT_GRANT: DAAB07-67-C-0199
CONTRACT_GRANT: JPL-952383
Distribution Limits
Public
Copyright
Other