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Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.
Document ID
19720044396
Document Type
Conference Proceedings
Authors
Johnson, E. S.
Compton, W. D. (Illinois, University Urbana, Ill., United States)
Date Acquired
August 6, 2013
Publication Date
January 1, 1971
Subject Category
PHYSICS, SOLID-STATE
Meeting Information
Radiation effects in semiconductors; International Conference(Albany, NY)
Funding Number(s)
CONTRACT_GRANT: JPL-952383
CONTRACT_GRANT: DAAB07-67-C-0199
Distribution Limits
Public
Copyright
Other