Lithium - An impurity of interest in radiation effects of silicon.Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.
Document ID
19720044398
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Naber, J. A.
Horiye, H.
Passenheim, B. C. (Gulf Energy and Environmental Systems, Inc. San Diego, Calif., United States)
Date Acquired
August 6, 2013
Publication Date
January 1, 1971
Subject Category
Physics, Solid-State
Meeting Information
Meeting: Radiation effects in semiconductors; International Conference