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Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells.An investigation of the characteristics and behavior of 10 ohm-cm silicon cells having abnormally high open-circuit voltages was made. The cells studied were made by a new, highly simplified, contact fabrication process which creates both a contact and a thin electric field region at the cell back surface without the need for phosphorus layer removal. These cells had open-circuit voltages of about 0.58 V and their performance as a function of thickness, temperature, and 1 MeV electron irradiation is detailed. The study showed that 10 ohm-cm back-surface-field cells can have the high initial efficiencies and desirable temperature behavior of low resistivity cells. Thin back-surface-field cells were made and showed, in addition, much greater radiation damage resistance. A mechanism is proposed to explain the results.
Document ID
19720048464
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Mandelkorn, J.
Lamneck, J. H., Jr.
(NASA Lewis Research Center Cleveland, Ohio, United States)
Date Acquired
August 6, 2013
Publication Date
May 1, 1972
Subject Category
Auxiliary Systems
Meeting Information
Meeting: Institute of Electrical and Electronics Engineers, Photovoltaic Specialists Conference
Location: Silver Spring, MD
Start Date: May 2, 1972
End Date: May 5, 1972
Sponsors: Institute of Electrical and Electronics Engineers
Accession Number
72A32130
Distribution Limits
Public
Copyright
Other

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