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Characteristics of infrared photodetectors produced by radiation doping.High-energy electrons (approximately 7 MeV) were used to radiation-dope extrinsic silicon. Both n- and p-type silicon photodetectors were fabricated using this doping technique. The 500 K blackbody responsivity, spectral response, and peak detectivity were determined for these devices. The peak detectivity values measured were 4.8 Gm Hz to the 1/2 power per W at 2.15 microns for 0.1-ohm-cm n-type devices and 3.7 Gm Hz to the 1/2 power per W at 40 microns for 10-ohm-cm p-type detectors. A comparison of the thermally generated background majority carrier concentration for radiation-doped and conventional impurity-doped detectors is made.
Document ID
19730037132
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Gross, C.
(NASA Langley Research Center Hampton, Va., United States)
Mattauch, R. J.
Viola, T. J., Jr.
(Virginia, University Charlottesville, Va., United States)
Date Acquired
August 7, 2013
Publication Date
February 1, 1973
Publication Information
Publication: Journal of Applied Physics
Volume: 44
Subject Category
Instrumentation And Photography
Accession Number
73A21934
Distribution Limits
Public
Copyright
Other

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