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Photoconductor-metal contact at higher densities.The formation of space charge in the barrier region is discussed. This region extends to a distance, x-sub o, equal to 200 A plus twice the mean free path of majority carriers. The conventional transport equation can be used only for x greater than x-sub o, and the carrier density at x-sub o represents a boundary condition for the bulk. Its change as a function of applied voltage, temperature, and light intensity in photoconducting CdS is discussed. The time dependence of the space-charge formation in the region between 0 and x-sub o is analyzed. It is shown under which conditions the individuality of the metal contact is observable.
Document ID
19730040183
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Dussel, G. A.
Boer, K. W.
(Delaware, University Newark, Del., United States)
Stirn, R. J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 7, 2013
Publication Date
February 15, 1973
Publication Information
Publication: Physical Review B - Solid State
Subject Category
Physics, Solid-State
Accession Number
73A24985
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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