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The light-sensitive MNOS memory transistor.The behavior theory of the light-sensitive MNOS memory transistor is developed and supported by presented experimental evidence. It is shown that the nitride, oxide, and silicon space-charge current-field relationships necessary for comparison of theory and experiment can be obtained from steady-state current-voltage measurements on the MNOS device.
Document ID
19730049419
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Sewell, F. A., Jr. (Sperry Rand Research Center Sudbury, Mass., United States)
Date Acquired
August 7, 2013
Publication Date
June 1, 1973
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-20
Subject Category
Electronic Equipment
Accession Number
73A34221
Funding Number(s)
CONTRACT_GRANT: NAS1-2570
Distribution Limits
Public
Copyright
Other

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