NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Temperature, stress, and annealing effects on the luminescence from electron-irradiated siliconLow-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.
Document ID
19740036540
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Jones, C. E.
Johnson, E. S.
Compton, W. D.
Noonan, J. R.
Streetman, B. G. (Illinois, University Urbana, Ill., United States)
Date Acquired
August 7, 2013
Publication Date
December 1, 1973
Publication Information
Publication: Journal of Applied Physics
Volume: 44
Subject Category
PHYSICS, SOLID-STATE
Funding Number(s)
CONTRACT_GRANT: DAAB07-67-C-0199
CONTRACT_GRANT: NSF GK-29714
CONTRACT_GRANT: JPL-952383
CONTRACT_GRANT: DAAB07-72-C-0259
Distribution Limits
Public
Copyright
Other