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Recombination luminescence from electron-irradiated Li-diffused SiLithium doping has a dramatic effect on the low-temperature photoluminescence of electron-irradiated Si. In oxigen-lean Si with Li doping, a new irradiation-dependent luminescence band between 0.75 and 1.05 eV is observed, which is dominated by a zero-phonon peak at 1.045 eV. This band is believed to be due to radiative transitions involving a Li-modified divacancy. This band is present also in oxygen-rich, Li-diffused Si and is accompanied by bands previously related to the Si-G15(K) center and the divacancy. The intensities of the Li-modified divacancy and Si-G15(K) center bands are relatively weak in the oxygen-rich material, apparently due to the formation of lithium-oxygen complexes which reduce the concentration of unassociated interstitial Li and O.
Document ID
19740036541
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Johnson, E. S.
Compton, W. D.
Noonan, J. R.
Streetman, B. G.
(Illinois, University Urbana, Ill., United States)
Date Acquired
August 7, 2013
Publication Date
December 1, 1973
Publication Information
Publication: Journal of Applied Physics
Volume: 44
Subject Category
Physics, Solid-State
Accession Number
74A19291
Funding Number(s)
CONTRACT_GRANT: DAAB07-72-C-0259
CONTRACT_GRANT: DAAB07-67-C-0199
CONTRACT_GRANT: NSF GK-29714
CONTRACT_GRANT: JPL-952383
Distribution Limits
Public
Copyright
Other

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