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Photoluminescence of Zn-implanted GaNThe photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.
Document ID
19740041967
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.1655183
Authors
Pankove, J. I. (RCA Laboratories Princeton, N.J., United States)
Hutchby, J. A. (NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 7, 2013
Publication Date
March 15, 1974
Publication Information
Publication: Applied Physics Letters
Volume: 24
Subject Category
Physics, Solid-State
Accession Number
74A24717
Distribution Limits
Public
Copyright
Other

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