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Record Details

Record 90 of 15420
Photoluminescence of Zn-implanted GaN
External Online Source: doi:10.1063/1.1655183
Author and Affiliation:
Pankove, J. I.(RCA Laboratories, Princeton, N.J., United States)
Hutchby, J. A.(NASA Langley Research Center, Hampton, Va., United States)
Abstract: The photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.
Publication Date: Mar 15, 1974
Document ID:
19740041967
(Acquired Dec 04, 1995)
Accession Number: 74A24717
Subject Category: PHYSICS, SOLID-STATE
Document Type: Journal Article
Publication Information: Applied Physics Letters; 24; Mar. 15
Publisher Information: United States
Financial Sponsor: NASA; United States
Description: 3p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: GALLIUM COMPOUNDS; ION IMPLANTATION; NITRIDES; PHOTOLUMINESCENCE; ZINC; CRYSTAL OPTICS; ELECTRO-OPTICS; LIGHT EMITTING DIODES; METAL IONS; PHOTOPEAK; SEMICONDUCTORS (MATERIALS)
Imprint And Other Notes: Applied Physics Letters, vol. 24, Mar. 15, 1974, p. 281-283.
Miscellaneous Notes: 1974, p. 281-283
Availability Source: Other Sources
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