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Properties of Zn-doped GaN. I - PhotoluminescenceIt is shown that zinc in gallium nitride forms an efficient radiative center emitting blue light at 2.86 plus or minus 0.02 eV and acts as a deep acceptor that can render the crystal insulating. A systematic variation of growth conditions indicates that an optimization of the photoluminescence efficiency is possible. Under nonoptimal conditions lower photon energy emission is obtained.
Document ID
19740042337
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Pankove, J. I.
Berkeyheiser, J. E.
Miller, E. A.
(RCA Laboratories Princeton, N.J., United States)
Date Acquired
August 7, 2013
Publication Date
March 1, 1974
Publication Information
Publication: Journal of Applied Physics
Volume: 45
Subject Category
Physics, Solid-State
Accession Number
74A25087
Distribution Limits
Public
Copyright
Other

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