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The effect of Be/+/ ion implanted exponential and uniform impurity profiles on the electrical characteristics of GaAs solar cellsThe high surface recombination velocity is the major deterrent to obtaining efficient GaAs solar cells. If, however, an electric field is built in at the surface, the carriers will be swept away from the surface thus minimizing the surface recombination velocity problem. It has been previously shown theoretically that an exponential impurity distribution in the doped region of the cell results in a built-in electric field. Ion implantation was used to produce solar cells with an exponential impurity profile and cells with uniform profiles. It is shown that cells with an exponential impurity profile have higher open-circuit voltage, fill factors, and spectral response than those with a uniform impurity profile.
Document ID
19740051622
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Vaidyanathan, K. V.
Walker, G. H.
(NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 7, 2013
Publication Date
January 1, 1974
Subject Category
Auxiliary Systems
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Palo Alto, CA
Start Date: November 13, 1973
End Date: November 15, 1973
Sponsors: Institute of Electrical and electronics Engineers
Accession Number
74A34372
Distribution Limits
Public
Copyright
Other

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