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Growth of silicon ribbon by edge-defined, film-fed growthRecent advances in the application of the edge-defined, film-fed growth (EFG) method to silicon ribbon are described. Ribbons up to 2 x 40 cm and 1 x 70 cm in width and length, respectively, have been grown at rates of 1 to 2.5 cm/min. The electrical properties of typical undoped ribbons are resistivity of 0.5 to 5 ohm-cm p-type, and hole mobility of 200 to 350 sq cm/V-sec. Ribbon growth speeds are consistent with the use of EFG silicon for terrestrial power.
Document ID
19740051650
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Bates, H. E.
Jewett, D. N.
White, V. E. (Tyco Laboratories, Inc. Waltham, Mass., United States)
Date Acquired
August 7, 2013
Publication Date
January 1, 1974
Subject Category
Physics, Solid-State
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Palo Alto, CA
Start Date: November 13, 1973
End Date: November 15, 1973
Sponsors: Institute of Electrical and electronics Engineers
Accession Number
74A34400
Funding Number(s)
CONTRACT_GRANT: NSF GI-37067X
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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