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Advances in the theory and application of BSF cellsThe characteristics and behavior of p(+), p solar cells were investigated. The p(+), p cells were made by the removal of the n(+) surface layers from n(+), p p(+), BSF cells followed by application of a suitable contact to the resultant p(+), p structures. The open circuit voltage of p(+), p cells was found to increase with increasing 'p' bulk resistivity. The measured open circuit velocity-temperature coefficients were positive and increased with increasing resistivity. An outline of prior limitations in solar cell design is presented, and the removal of these limitations through use of BSF effects is pointed out. The study of BSF effects made feasible production of very thin high efficiency silicon cells as well as high resistivity-high efficiency cells, two desirable types of silicon cells which were previously impossible to make.
Document ID
19750016040
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Mandelkorn, J.
(NASA Lewis Research Center Cleveland, OH, United States)
Lamneck, J. H.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 3, 2013
Publication Date
May 8, 1975
Subject Category
Energy Production And Conversion
Report/Patent Number
E-8344
NASA-TM-X-71723
Meeting Information
Meeting: Photovoltaic Specialists Conf.
Location: Phoenix, AZ
Country: United States
Start Date: May 6, 1975
End Date: May 8, 1975
Sponsors: IEEE
Accession Number
75N24112
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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