Thermoelectric properties of 80 a/o Si-20 a/o Ge alloy

This paper discusses the time and temperature dependence of the thermoelectric properties of n- and p-type 80 at. % Si-20 at. % Ge alloy. It is shown that the time-temperature behavior of the properties of both polarity types of this alloy can be described by means of a diffusion-limited dopant precipitation model due to Lifshitz and Slyozov (1961). An experimental program for the determination of the long-term behavior of the properties of the alloy is described in terms of the Lifshitz-Slyozov model, and the thermoelectric properties of the alloy are given for temperatures in the range from room temperature to 1000 C as a function of time up to and including twelve years. The data given for the p-type alloy represent the first time-dependent thermoelectric property data ever published for the p-type silicon-germanium alloys.