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SEM evaluation of metallization on semiconductorsA test method for the evaluation of metallization on semiconductors is presented and discussed. The method has been prepared in MIL-STD format for submittal as a proposed addition to MIL-STD-883. It is applicable to discrete devices and to integrated circuits and specifically addresses batch-process oriented defects. Quantitative accept/reject criteria are given for contact windows, other oxide steps, and general interconnecting metallization. Figures are provided that illustrate typical types of defects. Apparatus specifications, sampling plans, and specimen preparation and examination requirements are described. Procedures for glassivated devices and for multi-metal interconnection systems are included.
Document ID
19750029536
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Fresh, D. L.
(Aerospace Corp. Los Angeles, Calif., United States)
Adolphsen, J. W.
(NASA Goddard Space Flight Center Greenbelt, Md., United States)
Date Acquired
August 8, 2013
Publication Date
January 1, 1974
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Reliability physics 1974
Location: Las Vegas, NV
Start Date: April 2, 1974
End Date: April 4, 1974
Sponsors: USAF
Accession Number
75A13608
Distribution Limits
Public
Copyright
Other

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