NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
The preparation and properties of aluminum nitride filmsAluminum nitride films have been deposited on silicon substrates at 800-1200 C by the pyrolysis of an aluminum trichloride-ammonia complex, AlCl3.3NH3, in a gas flow system. The deposit was transparent, tightly adherent to the substrate, and was confirmed to be aluminum nitride by X-ray and electron diffraction techniques. The deposited aluminum nitride films were found to be polycrystalline with the crystallite size increasing with increasing temperature of deposition. Other properties of aluminum nitride films relevant to device applications, including density, refractive index, dissolution rate, dielectric constant, and masking ability, have been determined. These properties indicate that aluminum nitride films have potential as a dielectric in electronic devices.
Document ID
19750052018
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Chu, T. L.
Kelm, R. W., Jr.
(Southern Methodist University Dallas, Tex., United States)
Date Acquired
August 8, 2013
Publication Date
July 1, 1975
Publication Information
Publication: Electrochemical Society
Subject Category
Metallic Materials
Accession Number
75A36090
Funding Number(s)
CONTRACT_GRANT: NGL-44-007-042
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available