NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
internal optical losses in very thin cw heterojunction laser diodesTheoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.
Document ID
19750052358
Document Type
Reprint (Version printed in journal)
Authors
Butler, J. K.
(Southern Methodist University Dallas, Tex., United States)
Kressel, H.
Ladany, I.
(RCA Laboratories Princeton, N.J., United States)
Date Acquired
August 8, 2013
Publication Date
July 1, 1975
Subject Category
LASERS AND MASERS
Funding Number(s)
CONTRACT_GRANT: NAS1-11421
CONTRACT_GRANT: N00014-73-C-0335
Distribution Limits
Public
Copyright
Other