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Diffusion length measurement using the scanning electron microscopeThe present work describes a measuring technique employing the scanning electron microscope in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through application of highly doped surface field layers. The effects of high injection level and low-high junction current generation are investigated. Results obtained with this technique are compared to those obtained by a penetrating radiation (X-ray) method, and a close agreement is found. The SEM technique is limited to cells that contain a back surface field layer.
Document ID
19750053326
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weizer, V. G.
(NASA Lewis Research Center Cleveland, Ohio, United States)
Date Acquired
August 8, 2013
Publication Date
May 1, 1975
Subject Category
Solid-State Physics
Meeting Information
Meeting: Institute of Electrical and Electronics Engineers, Photovoltaic Specialists Conference
Location: Phoenix, AZ
Start Date: May 6, 1975
End Date: May 8, 1975
Sponsors: Institute of Electrical and Electronics Engineers
Accession Number
75A37398
Distribution Limits
Public
Copyright
Other

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