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Oxide nucleation on thin films of copper during in situ oxidation in an electron microscopeSingle-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.
Document ID
19750058838
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Heinemann, K.
Rao, D. B.
(NASA Ames Research Center Moffettt Field, Calif., United States)
Douglass, D. L.
(California, University Los Angeles, Calif., United States)
Date Acquired
August 8, 2013
Publication Date
August 1, 1975
Publication Information
Publication: Oxidation of Metals
Volume: 9
Subject Category
Metallic Materials
Accession Number
75A42910
Funding Number(s)
CONTRACT_GRANT: NSG-2025
CONTRACT_GRANT: NCA2-OP390-403
Distribution Limits
Public
Copyright
Other

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