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The effect of heat treatment on the resistivity of polycrystalline silicon filmsThe resistivity of doped polycrystalline silicon films has been studied as a function of post deposition heat treatments in an oxidizing atmosphere. It was found that a short oxidation cycle may produce a resistivity increase as large as three orders of magnitude in the polycrystalline films. The extent of change was dependent on the initial resistivity and the films' doping level and was independent of the total oxidation time.
Document ID
19750059361
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Fripp, A. L., Jr.
(NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 8, 2013
Publication Date
September 1, 1975
Subject Category
Solid-State Physics
Accession Number
75A43433
Distribution Limits
Public
Copyright
Other

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