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Interfacial impurities and the reaction between Si and evaporated AlAs commonly formed, the interface between substrate Si and evaporated Al is laden with impurities. Subsequent heating causes modest dissolution of Si into solid Al, the dissolution morphology being influenced by the interface impurities. In the present experiments, the amount of Si dissolving was considerably enhanced, causing sufficient interface movement to carry most interfaces clear of the original impurities. Under these conditions, the Si/Al interface assumes, during brief heat treatment, a simple shape composed of a few 111 plane-type facets. Such Si/Al interfaces produced in situ should be useful for low-temperature solid-state growth of Si.
Document ID
19750059390
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Best, J. S.
Mccaldin, J. O.
(California Institute of Technology Pasadena, Calif., United States)
Date Acquired
August 8, 2013
Publication Date
September 1, 1975
Publication Information
Publication: Journal of Applied Physics
Volume: 46
Subject Category
Solid-State Physics
Accession Number
75A43462
Distribution Limits
Public
Copyright
Other

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