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Low-threshold light-emitting-diode laserTechnique, which consists of reducing bandgap change at heterojunction to 0.1 eV and avoiding deep-level impurities such as Si and Ge, produces low-threshold laser diodes which are made from (AlGa)As and emit in visible spectrum.
Document ID
19760000176
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hawrylo, F. Z. (RCA)
Kressel, H. (RCA)
Date Acquired
August 8, 2013
Publication Date
August 1, 1976
Publication Information
Publication: NASA Tech Briefs
Volume: 1
Issue: 2
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
LAR-11477
Accession Number
76B10176
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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