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Semiconductor ohmic contactContact formed on p-type surface of semiconductor laser has several advantages: highly conductive degenerate region and narrow band gap provides surface for good metal-to-semiconductor contact; lattice parameter of GaAs is 5.6533 A; improved lattice match eases interface strain which reduces interface cracking of semiconductor material.
Document ID
19760000461
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hawrylo, F. Z. (RCA)
Kressel, H. (RCA)
Date Acquired
August 8, 2013
Publication Date
March 1, 1977
Publication Information
Publication: NASA Tech Briefs
Volume: 1
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
LAR-11691
Accession Number
76B10461
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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