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Integrated structure vacuum tubeHigh efficiency, multi-dimensional thin film vacuum tubes suitable for use in high temperature, high radiation environments are described. The tubes are fabricated by placing thin film electrode members in selected arrays on facing interior wall surfaces of an alumina substrate envelope. Cathode members are formed using thin films of triple carbonate. The photoresist used in photolithography aids in activation of the cathodes by carbonizing and reacting with the reduced carbonates when heated in vacuum during forming. The finely powdered triple carbonate is mixed with the photoresist used to delineate the cathode locations in the conventional solid state photolithographic manner. Anode and grid members are formed using thin films of refractory metal. Electron flow in the tubes is between grid elements from cathode to anode as in a conventional three-dimensional tube.
Document ID
19760024277
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Dimeff, J.
(NASA Ames Research Center Moffett Field, CA, United States)
Kerwin, W. J.
(NASA Ames Research Center Moffett Field, CA, United States)
Date Acquired
August 8, 2013
Publication Date
August 31, 1976
Subject Category
Engineering (General)
Report/Patent Number
Patent Number: NASA-CASE-ARC-10445-1
Patent Application Number: US-PATENT-APPL-SN-491418
Patent Number: US-PATENT-3,978,364
Accession Number
76N31365
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-ARC-10445-1|US-PATENT-3,978,364
Patent Application
US-PATENT-APPL-SN-491418
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