Metal-thin film insulator-semiconductor solar cellsThe characteristics of a specific M-I-S structure are analyzed for various assumed roles of the thin-film insulating layer. It is shown that the behavior of an ideal Schottky barrier is obtained in the case where the insulating layer does not hinder transport and no localized states are present (or, if present, their population is dictated by the metal Fermi level). The cell is a majority carrier device; by using the insulating layer to control transport, it becomes a minority carrier cell.
Document ID
19760031808
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Fonash, S. J. (Pennsylvania State University University Park, Pa., United States)