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The AMOS cell - An improved metal-semiconductor solar cellA new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.
Document ID
19760031818
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Stirn, R. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Yeh, Y.-C. M.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 8, 2013
Publication Date
January 1, 1975
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Scottsdale, AZ
Start Date: May 6, 1975
End Date: May 8, 1975
Accession Number
76A14784
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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