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Ion implanted photodiode detectors in epitaxial /Ga/x/In/1-x//AsIon implanted p-n junction photodiodes in epitaxially grown (Ga(x)In(1-x))As material are reported on here. Photoresponse in these diodes was investigated for approximately the entire composition range of x between zero and one. High values for quantum efficiency were obtained for the devices with a high value of x.
Document ID
19760032895
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ajmera, P. K. (North Carolina State Univ. Raleigh, NC, United States)
Hauser, J. R. (North Carolina State University Raleigh, N.C., United States)
Date Acquired
August 8, 2013
Publication Date
December 1, 1975
Publication Information
Publication: Applied Optics
Volume: 14
Subject Category
Solid-State Physics
Accession Number
76A15861
Funding Number(s)
CONTRACT_GRANT: NGR-34-002-172
Distribution Limits
Public
Copyright
Other

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