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Electron and proton damage coefficients in low-resistivity siliconThe electron and proton damage coefficients for low resistivity p-type boron-doped silicon were determined from minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. The bulk samples were irradiated with electrons at three energy levels (0.5, 1.5, and 2.5 MeV) using a Dynamitron. Lifetime measurements were made with a steady-state photoconductivity apparatus, and comparison measurements of diffusion length were obtained using the steady-state surface photovoltage method (Goodman, 1961). The diffusion-length damage coefficients increased with decreasing resistivity for boron-doped silicon; this dependence can be qualitatively accounted for using a two-level Hall-Shockley-Read model. The damage coefficients for solar cells were larger than for their bulk-material counterparts. The damage coefficient was apparently independent of the dislocation density in the 0.1 ohm-cm bulk samples and solar cells investigated.
Document ID
19760033411
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Srour, J. R.
(Northrop Research and Technology Center Hawthorne, CA, United States)
Othmer, S.
(Northrop Research and Technology Center Hawthorne, CA, United States)
Chiu, K. Y.
(Northrop Research and Technology Center Hawthorne, Calif., United States)
Date Acquired
August 8, 2013
Publication Date
December 1, 1975
Subject Category
Solid-State Physics
Accession Number
76A16377
Funding Number(s)
CONTRACT_GRANT: NAS3-17849
Distribution Limits
Public
Copyright
Other

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