NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
A study of efficiency in low resistivity silicon solar cellsA general device-analysis program has been utilized to study the efficiency of silicon solar cells. The analysis is applied to specific geometries of both n(+)-p and n(+)-p-p(+) solar cells, and involves a numerical solution of the basic transport and continuity equations. This approach allows solutions that are free of typical limiting assumptions involved in solving the device equations as well as solutions relating to lifetime, mobility variations, and diffused-region profiles. The analysis includes available empirical information on diffusion length, mobility, and lifetime as a function of doping, as well as a Gaussian profile for the diffused region. Results are presented which illustrate the limitations of efficiency as a function of doping. It is found that the maximum efficiencies for both types of cell converge at lower resistivities to around 16% with air-mass-zero radiation and a single-layer absorbing-SiO antireflecting film. It is also found that the minority-carrier lifetime, both in the n(+) surface and p-type bulk regions, presents serious limitations to conversion efficiency, particularly in the low-resistivity cells.
Document ID
19760036056
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Dunbar, P. M.
(North Carolina State Univ. Raleigh, NC, United States)
Hauser, J. R.
(North Carolina State University Raleigh, N.C., United States)
Date Acquired
August 8, 2013
Publication Date
February 1, 1976
Publication Information
Publication: Solid-State Electronics
Volume: 19
Subject Category
Energy Production And Conversion
Accession Number
76A19022
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available