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The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphirePartial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.
Document ID
19760036058
Document Type
Reprint (Version printed in journal)
Authors
Pisciotta, B. P. (NASA Langley Research Center Hampton, VA, United States)
Gross, C. (NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 8, 2013
Publication Date
February 1, 1976
Publication Information
Publication: Solid-State Electronics
Volume: 19
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Other