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Magnetoresistance and noise properties of chevron stretcher detectors for field access bubble domain devicesExperiments were devised to study the angular variation of the resistance and noise properties of one- and two-level chevron stretcher magnetoresistive detectors for use in field access bubble memory devices. All measurements, made with an electronic system, were performed on glass or garnet samples upon which 1 micron of SiO2 was sputter-deposited, followed by 4000 A of Permalloy for the 28-micron-period devices and 0.8 microns of SiO2, followed by 3000 A of Permalloy for the 20-micron-period devices. The geometrical and drive-state dependence of the zero-state noise were studied, as was its frequency dependence. It is found that both types of detectors operate primarily in the amplitude-shift mode for drive fields of interest and that the presence of a bubble in a detector causes a magnetoresistance change equal to that produced by increasing the in-plane drive field about 8 Oe in the absence of a bubble.
Document ID
19760054128
Document Type
Reprint (Version printed in journal)
Authors
George, P. K. (Rockwell International Corp. Anaheim, CA, United States)
Oeffinger, T. R. (Rockwell International Corp. Anaheim, CA, United States)
Chen, T. T. (Rockwell International Corp. Electronics Research Div., Anaheim, Calif., United States)
Date Acquired
August 8, 2013
Publication Date
July 1, 1976
Publication Information
Publication: Journal of Applied Physics
Volume: 47
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Distribution Limits
Public
Copyright
Other