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Outline and comparison of the possible effects present in a metal-thin-film-insulator-semiconductor solar cellThe advantages possible with the insertion of a thin-film insulating or semi-insulating layer between a metal and a semiconductor to form the MIS photovoltaic device have been presented previously in the literature. This MIS configuration may be considered as a specific example of a more general class of photovoltaic devices: electrode-thin-film-insulator-semiconductor devices. Since the advantages of the configuration were pointed out, there has been considerable experimental interest in these photovoltaic devices. Because the previous analysis showed that the introduction of the insulator layer could produce several different but advantageous effects, this paper presents a further outline giving a comparison of these effects together with their ramifications.
Document ID
19760057104
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Fonash, S. J.
(Pennsylvania State University University Park, Pa., United States)
Date Acquired
August 8, 2013
Publication Date
August 1, 1976
Publication Information
Publication: Journal of Applied Physics
Volume: 47
Subject Category
Energy Production And Conversion
Accession Number
76A40070
Funding Number(s)
CONTRACT_GRANT: NATO-777
CONTRACT_GRANT: JPL-954181
Distribution Limits
Public
Copyright
Other

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