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Efficient photovoltaic heterojunctions of indium tin oxides on siliconHeterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60
Document ID
19760087416
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Dubow, J. B.
Sites, J. R.
(Colorado State University Fort Collins, Colo., United States)
Burk, D. E.
Date Acquired
August 8, 2013
Publication Date
October 15, 1976
Publication Information
Publication: Applied Physics Letters
Volume: 29
Subject Category
Solid-State Physics
Accession Number
76A46271
Funding Number(s)
CONTRACT_GRANT: NSG-3083
Distribution Limits
Public
Copyright
Other

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