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Differential multi-MOSFET nuclear radiation sensorCircuit allows minimization of thermal-drift errors, low power consumption, operation over wide dynamic range, improved sensitivity and stability with metaloxide-semiconductor field-effect transistor sensors.
Document ID
19770000059
Document Type
Other - NASA Tech Brief
Authors
Deoliveira, W. A.
Date Acquired
August 8, 2013
Publication Date
June 1, 1977
Publication Information
Publication: NASA Tech Briefs
Volume: 2
Issue: 1
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
MSC-14444
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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