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MIS diode structure in As+-implanted CdSIncreased turnover voltage suggests metal-insulator-semiconductor structure.
Document ID
19770000159
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hutchby, J. A.
Date Acquired
August 8, 2013
Publication Date
September 1, 1977
Publication Information
Publication: NASA Tech Briefs
Volume: 2
Issue: 2
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
LAR-12156
ISSN: 0145-319X
Report Number: LAR-12156
Accession Number
77B10159
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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