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Vacuum UV performance of silicon detectorsThe sensitivity, time-varying response, and spatial sensitivity of four silicon detectors of vacuum UV were measured by passing a typical flux of 3 x 10 photons/s at the Lyman alpha line of 1215.7 A through an exit aperture of 0.55 mm x 0.8 mm. The detectors tested were: (1) a Fairchild FPM 200 silicon planar passivated photodiode with the window removed so that radiation could directly impinge on the center of the 1.0 mm square silicon chip, (2) a Fairchild FPM 100 silicon NPN planar passivated phototransistor, (3) the Hewlett-Packard 5082-4204 silicon planar PIN photodiode, and (4) the United Detector Technology PIN Spot/2 special sensitive silicon Schottky surface photodiode with the window removed.
Document ID
19770034524
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ohlhaber, R. L.
(IIT Research Institute Chicago, Ill., United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1977
Publication Information
Publication: Applied Optics
Volume: 16
Subject Category
Instrumentation And Photography
Accession Number
77A17376
Funding Number(s)
CONTRACT_GRANT: NAS1-8992
Distribution Limits
Public
Copyright
Other

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