NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Investigation of the double exponential in the current-voltage characteristics of silicon solar cellsDifficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.
Document ID
19770047875
Document Type
Reprint (Version printed in journal)
Authors
Wolf, M. (Pennsylvania Univ. Philadelphia, PA, United States)
Noel, G. T. (Pennsylvania, University Philadelphia, Pa., United States)
Stirn, R. J. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 8, 2013
Publication Date
April 1, 1977
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-24
Subject Category
SPACECRAFT PROPULSION AND POWER
Funding Number(s)
CONTRACT_GRANT: JPL-953536
Distribution Limits
Public
Copyright
Other