The influence of stripe width on the threshold current of double-heterojunction lasers

Experimental measurements of the threshold current of oxide-isolated stripe laser as a function of stripe width and p-layer resistivity are presented. A calculation of the influence of carrier outdiffusion has been made, including the effect of current leakage beyond the stripe edges. The calculated threshold increase is in substantial agreement with experiment for stripe widths down to about 10 microns. The data also yield an effective diffusion length of about 7 microns for the lasers studied. Deviations between experimental and calculated thresholds occurring at stripe widths of 4-6 microns are represented by an empirical curve which is compared with previously published calculations of threshold gain.